PBLS6004D,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Breakdown Voltage :

60V

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Base (R1) :

22k Ω

Collector Emitter Voltage (VCEO) :

150mV

Number of Pins :

6

Transistor Application :

SWITCHING

Published :

2009

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 340mV @ 100mA, 1A

Mount :

Surface Mount

Package / Case :

SC-74, SOT-457

Current - Collector Cutoff (Max) :

1μA 100nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

6

Max Operating Temperature :

150°C

Number of Elements :

2

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

60V

Element Configuration :

Dual

Lead Free :

Lead Free

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Transition Frequency :

185MHz

Factory Lead Time :

4 Weeks

Voltage - Collector Emitter Breakdown (Max) :

50V 60V

Resistor - Emitter Base (R2) :

22k Ω

Terminal Finish :

Tin (Sn)

Max Collector Current :

700mA

Polarity :

NPN, PNP

Current - Collector (Ic) (Max) :

100mA 700mA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

6

Frequency - Transition :

185MHz

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Base Part Number :

PBLS6004

Min Operating Temperature :

-65°C

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V / 150 @ 500mA 5V

Max Power Dissipation :

600mW