PBLS4004V,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Current - Collector Cutoff (Max) :

1μA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

300MHz

Published :

2009

Power - Max :

300mW

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

JESD-30 Code :

R-PDSO-F6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Number of Elements :

2

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current - Collector (Ic) (Max) :

100mA 500mA

Package / Case :

SOT-563, SOT-666

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V / 150 @ 100mA 2V

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Polarity/Channel Type :

NPN AND PNP

Base Part Number :

PBLS4004

Pin Count :

6

Number of Terminations :

6

Resistor - Base (R1) :

22k Ω

Transition Frequency :

300MHz

Resistor - Emitter Base (R2) :

22k Ω

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Power Dissipation-Max (Abs) :

0.2W

Operating Temperature (Max) :

150°C

Terminal Form :

Flat

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)