PBLS4004V,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

JESD-30 Code :

R-PDSO-F6

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max (Abs) :

0.2W

Published :

2009

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Terminal Position :

Dual

Polarity/Channel Type :

NPN AND PNP

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Resistor - Base (R1) :

22k Ω

Qualification Status :

Not Qualified

Current - Collector Cutoff (Max) :

1μA

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power - Max :

300mW

Terminal Form :

Flat

Mounting Type :

Surface Mount

Number of Elements :

2

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Surface Mount :

yes

Current - Collector (Ic) (Max) :

100mA 500mA

Transistor Application :

SWITCHING

Base Part Number :

PBLS4004

Resistor - Emitter Base (R2) :

22k Ω

Number of Terminations :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V / 150 @ 100mA 2V

Package / Case :

SOT-563, SOT-666

Transition Frequency :

300MHz

JESD-609 Code :

e3

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

300MHz

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR