PBLS4003D,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V / 300 @ 100mA 5V

ECCN Code :

EAR99

Resistor - Emitter Base (R2) :

10k Ω

Number of Pins :

6

JESD-609 Code :

e3

Terminal Form :

Gull wing

Max Collector Current :

700mA

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Current - Collector Cutoff (Max) :

1μA 100nA

Base Part Number :

PBLS4003

Transition Frequency :

150MHz

Package / Case :

SC-74, SOT-457

Current - Collector (Ic) (Max) :

100mA 700mA

Frequency - Transition :

150MHz

Collector Emitter Voltage (VCEO) :

150mV

Max Operating Temperature :

150°C

Transistor Application :

SWITCHING

Max Breakdown Voltage :

40V

Number of Elements :

2

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Pin Count :

6

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Breakdown Voltage :

40V

Transistor Type :

1 NPN Pre-Biased, 1 PNP

Polarity :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 310mV @ 100mA, 1A

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Published :

2009

Resistor - Base (R1) :

10k Ω

Max Power Dissipation :

600mW

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

4 Weeks

Element Configuration :

Dual

Terminal Finish :

Tin (Sn)