PBLS4001V,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Number of Elements :

2

Pin Count :

6

Power - Max :

300mW

Transistor Element Material :

SILICON

Resistor - Base (R1) :

2.2k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 1

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Power Dissipation-Max (Abs) :

0.3W

Current - Collector (Ic) (Max) :

100mA 500mA

Transistor Application :

SWITCHING

Frequency - Transition :

300MHz

Operating Temperature (Max) :

150°C

JESD-30 Code :

R-PDSO-F6

Terminal Position :

Dual

Transition Frequency :

300MHz

Base Part Number :

PBLS4001

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V / 150 @ 100mA 2V

Terminal Form :

Flat

Qualification Status :

Not Qualified

Package / Case :

SOT-563, SOT-666

Resistor - Emitter Base (R2) :

2.2k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 350mV @ 50mA, 500mA

Mounting Type :

Surface Mount

Transistor Type :

1 NPN Pre-Biased, 1 PNP

RoHS Status :

ROHS3 Compliant

Voltage - Collector Emitter Breakdown (Max) :

50V 40V

Current - Collector Cutoff (Max) :

1μA

Published :

2009

Polarity/Channel Type :

PNP

JESD-609 Code :

e3

ECCN Code :

EAR99