PBLS2001D,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Power Dissipation :

400mW

Frequency - Transition :

185MHz

Number of Elements :

2

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 20mA 5V / 220 @ 500mA 2V

Polarity :

NPN, PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500μA, 10mA / 280mV @ 100mA, 1A

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Radiation Hardening :

No

Operating Supply Voltage :

20V

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

20V

Published :

2009

Base Part Number :

PBLS2001

Max Breakdown Voltage :

20V

Peak Reflow Temperature (Cel) :

260

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Pin Count :

6

Max Operating Temperature :

150°C

Factory Lead Time :

4 Weeks

Transistor Type :

1 NPN Pre-Biased, 1 PNP

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Terminations :

6

Transition Frequency :

185MHz

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Transistor Application :

SWITCHING

Voltage - Collector Emitter Breakdown (Max) :

50V 20V

Max Collector Current :

1A

Collector Emitter Voltage (VCEO) :

150mV

Emitter Base Voltage (VEBO) :

-5V

Min Operating Temperature :

-65°C

Max Power Dissipation :

600mW

Current - Collector Cutoff (Max) :

1μA 100nA

Package / Case :

SC-74, SOT-457

Max Output Current :

100mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Element Configuration :

Dual

Resistor - Base (R1) :

2.2k Ω

Current - Collector (Ic) (Max) :

100mA 1A

Resistor - Emitter Base (R2) :

2.2k Ω

Continuous Collector Current :

-1A