NTUD3170NZT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

125mW

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

12.5pF @ 15V

Turn On Delay Time :

16.5 ns

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Rise Time :

25.5ns

Published :

2005

Power Dissipation :

200mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Contact Plating :

Tin

Lead Free :

Lead Free

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Fall Time (Typ) :

80 ns

Transistor Application :

SWITCHING

Resistance :

1.5Ohm

Height :

400μm

Pbfree Code :

yes

Continuous Drain Current (ID) :

280mA

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

1.05mm

Drain to Source Breakdown Voltage :

20V

Package / Case :

SOT-963

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

NTUD3170NZ

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Pins :

6

Element Configuration :

Dual

Width :

850μm

Pin Count :

6

Number of Terminations :

6

Threshold Voltage :

1V

Factory Lead Time :

8 Weeks

JESD-609 Code :

e3

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

142 ns

Current - Continuous Drain (Id) @ 25°C :

220mA

Gate to Source Voltage (Vgs) :

8V

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 100mA, 4.5V

RoHS Status :

ROHS3 Compliant