NTUD3169CZT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Published :

2005

Lead Free :

Lead Free

Width :

850μm

ECCN Code :

EAR99

Radiation Hardening :

No

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

6

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

8V

Number of Terminations :

6

Current - Continuous Drain (Id) @ 25°C :

220mA 200mA

Base Part Number :

NTUD3169CZ

Fall Time (Typ) :

145 ns

Height :

400μm

Drain to Source Breakdown Voltage :

20V

Turn On Delay Time :

26 ns

Number of Elements :

2

FET Type :

N and P-Channel

Rise Time :

46ns

Threshold Voltage :

1V

Continuous Drain Current (ID) :

280mA

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

FET Feature :

Logic Level Gate

Pin Count :

6

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Pbfree Code :

yes

Length :

1.05mm

Mounting Type :

Surface Mount

Power Dissipation :

200mW

Turn-Off Delay Time :

196 ns

Max Power Dissipation :

710mW

Contact Plating :

Tin

Power - Max :

125mW

Transistor Application :

SWITCHING

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 100mA, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

12.5pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-963