NTMFD4902NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Lead Free :

Lead Free

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual), Schottky

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Element Configuration :

Dual

Pin Count :

8

Factory Lead Time :

17 Weeks

Power - Max :

1.1W 1.16W

Drain Current-Max (Abs) (ID) :

13.5A

Mounting Type :

Surface Mount

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Number of Pins :

8

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

13.3A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Case Connection :

DRAIN SOURCE

Number of Terminations :

8

Drain to Source Voltage (Vdss) :

30V

Pulsed Drain Current-Max (IDM) :

60A

Drain-source On Resistance-Max :

0.01Ohm

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-PowerTDFN

Max Power Dissipation :

1.16W

Current - Continuous Drain (Id) @ 25°C :

10.3A 13.3A

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Pbfree Code :

yes