NTMFD4901NFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

13.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

6.5m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN SOURCE

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual), Schottky

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

60A

Pbfree Code :

yes

Radiation Hardening :

No

Element Configuration :

Dual

Published :

2012

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Package / Case :

8-PowerTDFN

Power - Max :

1.1W 1.2W

Surface Mount :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

10.3A 17.9A

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Factory Lead Time :

9 Weeks

Max Power Dissipation :

1.2W

JESD-609 Code :

e3

Number of Terminations :

8

Pin Count :

8

Vgs(th) (Max) @ Id :

2.2V @ 250µA

ECCN Code :

EAR99

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.01Ohm

Number of Pins :

8

Continuous Drain Current (ID) :

17.9A