NTE3322

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Current - Collector Pulsed (Icm) :

120 A

Test Condition :

-

Number of Elements :

1

Power - Max :

170 W

Reach Compliance Code :

Unknown

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

COLLECTOR

Power Dissipation-Max (Abs) :

200 W

Package Shape :

RECTANGULAR

Number of Terminals :

3

Collector-Emitter Voltage-Max :

900 V

Input Type :

Standard

Manufacturer :

NTE Electronics

Package / Case :

TO-3P-3, SC-65-3

Switching Energy :

-

Package :

Bag

Fall Time-Max (tf) :

400 ns

Terminal Position :

Single

Surface Mount :

No

Gate-Emitter Voltage-Max :

25 V

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

460ns/600ns

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 60A

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

IGBT Type :

-

Operating Temperature :

150°C (TJ)

Collector Current-Max (IC) :

60 A

Product Status :

Active

Reverse Recovery Time (trr) :

2.5 µs

Supplier Device Package :

TO-3P

Voltage - Collector Emitter Breakdown (Max) :

900 V

ECCN Code :

EAR99

Terminal Form :

THROUGH-HOLE

Polarity/Channel Type :

N-Channel

Configuration :

Single

Subcategory :

Insulated Gate BIP Transistors

Series :

-

Current - Collector (Ic) (Max) :

60 A