NTE3322

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 60A

Collector Current-Max (IC) :

60 A

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Transistor Element Material :

SILICON

Number of Terminals :

3

Td (on/off) @ 25°C :

460ns/600ns

ECCN Code :

EAR99

Input Type :

Standard

Terminal Position :

Single

Current - Collector Pulsed (Icm) :

120 A

Subcategory :

Insulated Gate BIP Transistors

Terminal Form :

THROUGH-HOLE

Voltage - Collector Emitter Breakdown (Max) :

900 V

Power - Max :

170 W

Power Dissipation-Max (Abs) :

200 W

Test Condition :

-

Fall Time-Max (tf) :

400 ns

Case Connection :

COLLECTOR

IGBT Type :

-

Package :

Bag

Gate-Emitter Voltage-Max :

25 V

Switching Energy :

-

Series :

-

Product Status :

Active

Polarity/Channel Type :

N-Channel

Operating Temperature :

150°C (TJ)

Package Shape :

RECTANGULAR

Reverse Recovery Time (trr) :

2.5 µs

Collector-Emitter Voltage-Max :

900 V

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSFM-T3

Supplier Device Package :

TO-3P

Current - Collector (Ic) (Max) :

60 A

Surface Mount :

No

Manufacturer :

NTE Electronics

Transistor Application :

POWER CONTROL