NTE3310

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - IGBTs - Single

Qualification Status :

Not Qualified

Test Condition :

-

Supplier Device Package :

TO-3P

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

Voltage - Collector Emitter Breakdown (Max) :

600 V

Switching Energy :

-

Series :

-

Package Shape :

RECTANGULAR

Vce(on) (Max) @ Vge, Ic :

4V @ 15V, 15A

Transistor Element Material :

SILICON

Product Status :

Active

Configuration :

Single

Input Type :

Standard

Gate-Emitter Voltage-Max :

20 V

Collector-Emitter Voltage-Max :

600 V

Power - Max :

100 W

Case Connection :

COLLECTOR

Current - Collector (Ic) (Max) :

415 A

Terminal Position :

Single

Collector Current-Max (IC) :

15 A

Terminal Form :

THROUGH-HOLE

IGBT Type :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

Motor Control

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PSFM-T3

Package :

Bag

Surface Mount :

No

Current - Collector Pulsed (Icm) :

30 A

Power Dissipation-Max (Abs) :

100 W

Subcategory :

Insulated Gate BIP Transistors

Number of Elements :

1

Fall Time-Max (tf) :

350 ns

Manufacturer :

NTE Electronics

Mounting Type :

Through Hole

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Package / Case :

TO-3P-3, SC-65-3

Td (on/off) @ 25°C :

400ns/500ns