NTE290

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

600 mW

Category :

Bipolar Small Signal

Transistor Polarity :

PNP

Operating Temperature Classification :

Military

Voltage - Collector Emitter Breakdown (Max) :

80 V

Number of Terminals :

3

ECCN Code :

EAR99

Frequency - Transition :

120MHz

Number of Elements :

1

Subcategory :

Other Transistors

Collector Current-Max (IC) :

0.5 A

Output Power :

Not Required(W)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JEDEC-95 Code :

TO-92

Mounting Type :

Through Hole

Product Status :

Active

Current - Collector (Ic) (Max) :

500 mA

Reach Compliance Code :

Unknown

Configuration :

Single

Series :

-

Rad Hardened :

No

Supplier Device Package :

TO-92

Qualification Status :

Not Qualified

Surface Mount :

No

Transistor Element Material :

SILICON

Package Shape :

Round

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vce Saturation (Max) @ Ib, Ic :

600mV @ 40mA, 400mA

Terminal Position :

BOTTOM

Collector Current (DC) :

0.5(A)

JESD-30 Code :

O-PBCY-W3

Collector-Emitter Voltage-Max :

80 V

Current - Collector Cutoff (Max) :

1µA (ICBO)

Transistor Application :

AMPLIFIER

DC Current Gain-Min (hFE) :

100

HTS Code :

8541.21.00.75

Polarity/Channel Type :

PNP

Power Dissipation :

0.6(W)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 50mA, 5V

Transistor Type :

PNP

Operating Temp Range :

-55C to 150C

Package :

Bag

Mounting :

Through Hole

Terminal Form :

Wire

Frequency :

120(MHz)

Collector-Base Voltage :

100(V)

Pin Count :

3

Operating Temperature :

150°C (TJ)

Manufacturer :

NTE Electronics

Emitter-Base Voltage :

5(V)

Power Dissipation-Max (Abs) :

0.5 W