NTE287

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 10mA, 10V

Mounting Type :

Through Hole

Supplier Device Package :

TO-92

DC Current Gain :

25

Transistor Type :

NPN

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Type :

TO-92

Voltage - Collector Emitter Breakdown (Max) :

300 V

Mounting :

Through Hole

Operating Temp Range :

-55C to 150C

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Operating Temperature Classification :

Military

Emitter-Base Voltage :

6(V)

Number of Elements :

1

Output Power :

Not Required(W)

Power Dissipation :

0.625(W)

Power - Max :

625 mW

Product Status :

Active

Frequency :

50(MHz)

Current - Collector Cutoff (Max) :

100nA (ICBO)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Collector-Base Voltage :

300(V)

Current - Collector (Ic) (Max) :

500 mA

Category :

Bipolar Small Signal

Package :

Bag

Collector Current (DC) :

0.5(A)

Transistor Polarity :

NPN

Series :

-

Rad Hardened :

No

Manufacturer :

NTE Electronics

Frequency - Transition :

50MHz

Pin Count :

3