NTE267

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Emitter Voltage-Max :

30 V

Product Status :

Active

Subcategory :

Other Transistors

Number of Terminals :

3

Package Shape :

RECTANGULAR

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 500μA, 500mA

Surface Mount :

No

Current - Collector (Ic) (Max) :

500 mA

Frequency - Transition :

75MHz

ECCN Code :

EAR99

JEDEC-95 Code :

TO-202

DC Current Gain (hFE) (Min) @ Ic, Vce :

90000 @ 200mA, 5V

Qualification Status :

Not Qualified

Number of Elements :

1

Voltage - Collector Emitter Breakdown (Max) :

30 V

Manufacturer :

NTE Electronics

Configuration :

Darlington

Package :

Bag

Power Dissipation Ambient-Max :

6.25 W

Collector Current-Max (IC) :

0.5 A

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

DC Current Gain-Min (hFE) :

90000

Current - Collector Cutoff (Max) :

500nA

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Reach Compliance Code :

Unknown

Series :

-

Case Connection :

COLLECTOR

Polarity/Channel Type :

NPN

Transistor Type :

NPN - Darlington

Terminal Form :

THROUGH-HOLE

Power - Max :

6.25 W

Package / Case :

TO-202 Long Tab

Power Dissipation-Max (Abs) :

6.2 W

Terminal Position :

Single

Supplier Device Package :

TO-202