NTE2593

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Base Voltage :

2100(V)

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 500μA, 5V

Collector Current (DC) :

0.01(A)

DC Current Gain-Min (hFE) :

10

Current - Collector (Ic) (Max) :

10 mA

Number of Terminals :

3

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Case Connection :

Isolated

Current - Collector Cutoff (Max) :

1µA (ICBO)

Rad Hardened :

No

Package / Case :

TO-220-3

Emitter-Base Voltage :

5(V)

Voltage - Collector Emitter Breakdown (Max) :

2.1 kV

Output Power :

Not Required(W)

Product Status :

Active

Operating Temperature Classification :

Military

Pin Count :

3

Transistor Polarity :

NPN

Operating Temp Range :

-55C to 150C

Transistor Type :

NPN

Frequency - Transition :

6MHz

Reach Compliance Code :

Unknown

Collector-Emitter Voltage-Max :

2100 V

Terminal Position :

Single

Polarity/Channel Type :

NPN

Package :

Bag

DC Current Gain :

10@500UA@5V

Series :

-

Number of Elements :

1

Surface Mount :

No

Power - Max :

2 W

Category :

Bipolar Power

Configuration :

Single

JEDEC-95 Code :

TO-220AB

Supplier Device Package :

TO-220

Collector Current-Max (IC) :

0.01 A

Package Shape :

RECTANGULAR

Subcategory :

Other Transistors

Manufacturer :

NTE Electronics

Power Dissipation-Max (Abs) :

2 W

JESD-30 Code :

R-PSFM-T3

Frequency :

6(MHz)

Operating Temperature :

150°C (TJ)

Power Dissipation :

2(W)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

THROUGH-HOLE

Mounting Type :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

5V @ 200μA, 1mA