NTE256

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Mfr.Part #
NTE256
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-218-3
Datasheet
Download
Description
TRANS NPN DARL 400V 28A TO218
Stock
125
In Stock :
125

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Package :
Bag
Collector Emitter Voltage (VCEO) :
400 V
Emitter-Base Voltage :
10(V)
Package / Case :
TO-218-3
Polarity :
NPN
Max Collector Current :
28 A
Power Dissipation Ambient-Max :
150 W
Operating Temp Range :
-65C to 175C
Polarity/Channel Type :
NPN
Number of Elements :
1
HTS Code :
8541.29.00.95
Mounting :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
30 @ 10A, 5V
Surface Mount :
No
Vce Saturation (Max) @ Ib, Ic :
5V @ 5.6A, 28A
Mounting Type :
Through Hole
Power Dissipation-Max (Abs) :
150 W
Reach Compliance Code :
Unknown
Terminal Form :
THROUGH-HOLE
Configuration :
Single
Voltage - Collector Emitter Breakdown (Max) :
400 V
Collector Base Voltage (VCBO) :
600 V
Manufacturer :
NTE Electronics
Operating Temperature :
175°C (TJ)
Collector-Emitter Voltage-Max :
400 V
Transistor Type :
NPN - Darlington
Power Dissipation :
150(W)
Current - Collector Cutoff (Max) :
1mA
Case Connection :
COLLECTOR
Rad Hardened :
No
Collector Current (DC) :
28(A)
RoHS :
Compliant
Power - Max :
150 W
Number of Pins :
3
Emitter Base Voltage (VEBO) :
10 V
Series :
-
Mount :
Through Hole
Current - Collector (Ic) (Max) :
28 A
Collector-Base Voltage :
600(V)
DC Current Gain-Min (hFE) :
20
Qualification Status :
Not Qualified
Pin Count :
3 +Tab
Transistor Application :
SWITCHING
Package Type :
TO-218
Collector Current-Max (IC) :
28 A
Operating Temperature Classification :
Military
Frequency - Transition :
-
Subcategory :
Other Transistors
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Number of Terminals :
3
Terminal Position :
Single
Product Status :
Active
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Supplier Device Package :
TO-218
ECCN Code :
EAR99
JEDEC-95 Code :
TO-218
Datasheets
NTE256
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE256 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-218-3, Mounting Type:Through Hole, Operating Temperature:175°C (TJ), Number of Pins:3, NTE256 pinout, NTE256 datasheet PDF, NTE256 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE256 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE256


NPN - Darlington 175°C (TJ) 1mA 1 Elements SILICON NPN TO-218-3 Through Hole

NTE256 Overview


In this device, the DC current gain is 30 @ 10A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 5.6A, 28A.Keeping the emitter base voltage at 10 V allows for a high level of efficiency.Supplier device package TO-218 comes with the product.Voltage of maximal collector-emitter is set to 400 V.The device exhibits a collector-emitter breakdown at 400 V.Maximum collector currents can be below 28 A volts.

NTE256 Features


the DC current gain for this device is 30 @ 10A, 5V
the vce saturation(Max) is 5V @ 5.6A, 28A
the emitter base voltage is kept at 10 V
the supplier device package of TO-218


NTE256 Applications


There are a lot of NTE Electronics, Inc
NTE256 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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