NTE256
- Mfr.Part #
- NTE256
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-218-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 400V 28A TO218
- Stock
- 125
- In Stock :
- 125
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package :
- Bag
- Collector Emitter Voltage (VCEO) :
- 400 V
- Emitter-Base Voltage :
- 10(V)
- Package / Case :
- TO-218-3
- Polarity :
- NPN
- Max Collector Current :
- 28 A
- Power Dissipation Ambient-Max :
- 150 W
- Operating Temp Range :
- -65C to 175C
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- Mounting :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 10A, 5V
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 5.6A, 28A
- Mounting Type :
- Through Hole
- Power Dissipation-Max (Abs) :
- 150 W
- Reach Compliance Code :
- Unknown
- Terminal Form :
- THROUGH-HOLE
- Configuration :
- Single
- Voltage - Collector Emitter Breakdown (Max) :
- 400 V
- Collector Base Voltage (VCBO) :
- 600 V
- Manufacturer :
- NTE Electronics
- Operating Temperature :
- 175°C (TJ)
- Collector-Emitter Voltage-Max :
- 400 V
- Transistor Type :
- NPN - Darlington
- Power Dissipation :
- 150(W)
- Current - Collector Cutoff (Max) :
- 1mA
- Case Connection :
- COLLECTOR
- Rad Hardened :
- No
- Collector Current (DC) :
- 28(A)
- RoHS :
- Compliant
- Power - Max :
- 150 W
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 10 V
- Series :
- -
- Mount :
- Through Hole
- Current - Collector (Ic) (Max) :
- 28 A
- Collector-Base Voltage :
- 600(V)
- DC Current Gain-Min (hFE) :
- 20
- Qualification Status :
- Not Qualified
- Pin Count :
- 3 +Tab
- Transistor Application :
- SWITCHING
- Package Type :
- TO-218
- Collector Current-Max (IC) :
- 28 A
- Operating Temperature Classification :
- Military
- Frequency - Transition :
- -
- Subcategory :
- Other Transistors
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- Number of Terminals :
- 3
- Terminal Position :
- Single
- Product Status :
- Active
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- TO-218
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-218
- Datasheets
- NTE256

NPN - Darlington 175°C (TJ) 1mA 1 Elements SILICON NPN TO-218-3 Through Hole
NTE256 Overview
In this device, the DC current gain is 30 @ 10A, 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 5V @ 5.6A, 28A.Keeping the emitter base voltage at 10 V allows for a high level of efficiency.Supplier device package TO-218 comes with the product.Voltage of maximal collector-emitter is set to 400 V.The device exhibits a collector-emitter breakdown at 400 V.Maximum collector currents can be below 28 A volts.
NTE256 Features
the DC current gain for this device is 30 @ 10A, 5V
the vce saturation(Max) is 5V @ 5.6A, 28A
the emitter base voltage is kept at 10 V
the supplier device package of TO-218
NTE256 Applications
There are a lot of NTE Electronics, Inc
NTE256 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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