NTE2557

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Mfr.Part #
NTE2557
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-247-3
Datasheet
Download
Description
TRANS NPN DARL 200V 15A TO247
Stock
312
In Stock :
312

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Product Status :
Active
Transistor Element Material :
SILICON
Subcategory :
Other Transistors
Qualification Status :
Not Qualified
Power - Max :
100 W
Package Shape :
RECTANGULAR
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
JESD-30 Code :
R-PSFM-T3
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Voltage - Collector Emitter Breakdown (Max) :
200 V
Manufacturer :
NTE Electronics
DC Current Gain (hFE) (Min) @ Ic, Vce :
1500 @ 10A, 3V
Series :
-
Package :
Bag
Number of Terminals :
3
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Supplier Device Package :
TO-247
Reach Compliance Code :
Unknown
Terminal Position :
Single
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 30mA, 10A
Surface Mount :
No
DC Current Gain-Min (hFE) :
1500
Frequency - Transition :
20MHz
Collector-Emitter Voltage-Max :
200 V
Current - Collector Cutoff (Max) :
100μA
Package / Case :
TO-247-3
Power Dissipation-Max (Abs) :
100 W
Collector Current-Max (IC) :
15 A
Current - Collector (Ic) (Max) :
15 A
Terminal Form :
THROUGH-HOLE
Datasheets
NTE2557
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2557 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Mounting Type:Through Hole, Package / Case:TO-247-3, NTE2557 pinout, NTE2557 datasheet PDF, NTE2557 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2557 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2557


NPN - Darlington 150°C (TJ) 100μA 1 Elements SILICON NPN TO-247-3 Through Hole

NTE2557 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1500 @ 10A, 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 30mA, 10A.This product comes in a TO-247 device package from the supplier.A maximal collector-emitter voltage setting of 200 V is available.Device displays Collector Emitter Breakdown (200 V maximal voltage).

NTE2557 Features


the DC current gain for this device is 1500 @ 10A, 3V
the vce saturation(Max) is 1.5V @ 30mA, 10A
the supplier device package of TO-247


NTE2557 Applications


There are a lot of NTE Electronics, Inc
NTE2557 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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