NTE2542

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

120 V

Collector Current-Max (IC) :

25 A

RoHS :

Compliant

Width :

76.2 mm

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

150°C (TJ)

Collector-Emitter Voltage-Max :

120 V

Series :

-

Subcategory :

Other Transistors

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Current - Collector (Ic) (Max) :

25 A

Surface Mount :

No

Transistor Type :

PNP - Darlington

Vce Saturation (Max) @ Ib, Ic :

1.8V @ 24mA, 12A

Height :

12.7 mm

DC Current Gain-Min (hFE) :

2000

Manufacturer :

NTE Electronics

Package :

Bag

Polarity/Channel Type :

PNP

Power - Max :

120 W

Reach Compliance Code :

Unknown

Current - Collector Cutoff (Max) :

10μA (ICBO)

Power Dissipation-Max (Abs) :

120 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 12A, 4V

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Max Collector Current :

25 A

Collector Base Voltage (VCBO) :

120 V

Length :

152.4 mm

Weight :

7.257478 g

Case Connection :

COLLECTOR

Frequency - Transition :

-

Product Status :

Active

Transistor Element Material :

SILICON

Package Shape :

RECTANGULAR

Emitter Base Voltage (VEBO) :

6 V

Number of Pins :

3

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

120 V

Terminal Position :

Single

Configuration :

Single

Supplier Device Package :

TO-3P

ECCN Code :

EAR99

Package / Case :

TO-3P-3, SC-65-3