NTE253MCP

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Collector-Emitter Voltage-Max :

80 V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Frequency - Transition :

-

Collector Emitter Voltage (VCEO) :

80 V

Collector Current-Max (IC) :

4 A

Power - Max :

40 W

Manufacturer :

NTE Electronics

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Current - Collector (Ic) (Max) :

4 A

DC Current Gain-Min (hFE) :

2500

JEDEC-95 Code :

TO-126

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A, 3V

Surface Mount :

No

Voltage - Collector Emitter Breakdown (Max) :

80 V

Package Shape :

RECTANGULAR

Package :

Bag

Collector Base Voltage (VCBO) :

80 V

Subcategory :

BIP General Purpose Small Signal

Number of Terminals :

3

Number of Elements :

2

Terminal Position :

Single

Emitter Base Voltage (VEBO) :

5 V

Supplier Device Package :

TO-126

Power Dissipation Ambient-Max :

40 W

JESD-30 Code :

R-PSFM-T3

Current - Collector Cutoff (Max) :

100μA

Operating Temperature :

-65°C ~ 150°C (TJ)

Mount :

Through Hole

Reach Compliance Code :

Unknown

Package / Case :

TO-225AA, TO-126-3

Max Collector Current :

4 A

Power Dissipation-Max (Abs) :

40 W

Polarity/Channel Type :

NPN AND PNP

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Product Status :

Active

Number of Pins :

3

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Additional Feature :

MATCHED COMPLIMENTARY PAIR CONTAINS NTE253 AND NTE254

Series :

-

Configuration :

SEPARATE, 2 ELEMENTS

RoHS :

Compliant