NTE253

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Collector Current-Max (IC) :

4 A

Power - Max :

40 W

Transistor Type :

NPN - Darlington

Number of Elements :

1

Current - Collector Cutoff (Max) :

100μA

Power Dissipation :

40(W)

Voltage - Collector Emitter Breakdown (Max) :

80 V

Vce Saturation (Max) @ Ib, Ic :

3V @ 40mA, 4A

Transistor Application :

AMPLIFIER

Power Dissipation Ambient-Max :

40 W

Current - Collector (Ic) (Max) :

4 A

Rad Hardened :

No

Maximum Collector Cut-off Current :

500

Collector Current (DC) :

4(A)

ECCN Code :

EAR99

Package Shape :

RECTANGULAR

Operating Temperature Classification :

Military

Subcategory :

Other Transistors

Series :

-

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-126

Terminal Position :

Single

Package / Case :

TO-225AA, TO-126-3

JESD-30 Code :

R-PSFM-W3

Frequency - Transition :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting :

Through Hole

Power Dissipation-Max (Abs) :

40 W

Operating Temp Range :

-65C to 150C

Surface Mount :

No

DC Current Gain :

100

Operating Temperature :

-65°C ~ 150°C (TJ)

Configuration :

Single

Collector-Emitter Voltage :

80(V)

Collector-Base Voltage :

80(V)

Package Type :

TO-126

Product Status :

Active

Number of Terminals :

3

Terminal Form :

Wire

Polarity :

NPN

Manufacturer :

NTE Electronics

Mounting Type :

Through Hole

Supplier Device Package :

TO-126

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 1.5A, 3V

Reach Compliance Code :

Unknown

Collector-Emitter Voltage-Max :

80 V

Emitter-Base Voltage :

5(V)

DC Current Gain-Min (hFE) :

100

Package :

Bag

Polarity/Channel Type :

NPN