NTE2525

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 500mA, 2V

Weight :

72.574779 g

Transistor Polarity :

PNP

Collector Emitter Voltage (VCEO) :

50 V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rad Hardened :

No

Number of Elements :

1

Power - Max :

1 W

Series :

-

Category :

Bipolar Power

Vce Saturation (Max) @ Ib, Ic :

500mV @ 200mA, 4A

Mounting Type :

Through Hole

Number of Pins :

3

Operating Temperature :

150°C (TJ)

Max Collector Current :

8 A

Length :

152.4 mm

Max Operating Temperature :

150 °C

Operating Temperature Classification :

Military

Min Operating Temperature :

-55 °C

Frequency :

130(MHz)

REACH SVHC :

No SVHC

Emitter-Base Voltage :

6(V)

Output Power :

Not Required(W)

Frequency - Transition :

130MHz

Collector Base Voltage (VCBO) :

60 V

Pin Count :

3 +Tab

Operating Temp Range :

-55C to 150C

Manufacturer :

NTE Electronics

Product Status :

Active

Polarity :

PNP

Emitter Base Voltage (VEBO) :

6 V

Height :

12.7 mm

Transition Frequency :

130 MHz

Current - Collector Cutoff (Max) :

1µA (ICBO)

RoHS :

Compliant

Package :

Bag

Mount :

Through Hole

Current - Collector (Ic) (Max) :

8 A

Supplier Device Package :

TO-251

Collector Emitter Breakdown Voltage :

50 V

Transistor Type :

PNP

Power Dissipation :

1(W)

Collector Current (DC) :

8(A)

Mounting :

Through Hole

Collector-Base Voltage :

60(V)

Width :

76.2 mm

Max Power Dissipation :

20 W

Voltage - Collector Emitter Breakdown (Max) :

50 V

Configuration :

Single