NTE249

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bag

Collector-Emitter Voltage-Max :

100 V

Collector Current-Max (IC) :

16 A

Reach Compliance Code :

Unknown

Terminal Position :

BOTTOM

Number of Terminals :

2

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

150 W

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 10A, 3V

Surface Mount :

No

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

4V @ 80mA, 16A

Current - Collector Cutoff (Max) :

3mA

Supplier Device Package :

TO-3

Power - Max :

150 W

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Voltage - Collector Emitter Breakdown (Max) :

100 V

JEDEC-95 Code :

TO-3

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

NTE Electronics

Transistor Element Material :

SILICON

Series :

-

Terminal Form :

PIN/PEG

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Current - Collector (Ic) (Max) :

16 A

Subcategory :

Other Transistors

Transistor Type :

NPN - Darlington

Power Dissipation Ambient-Max :

150 W

Package Shape :

Round

JESD-30 Code :

O-MBFM-P2

Product Status :

Active

Frequency - Transition :

-

DC Current Gain-Min (hFE) :

1000

Package / Case :

TO-204AA, TO-3

Number of Elements :

1

Operating Temperature :

-55°C ~ 200°C (TJ)

Transistor Application :

AMPLIFIER