NTE244

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Subcategory :

Other Transistors

Package :

Bag

Voltage - Collector Emitter Breakdown (Max) :

80 V

Manufacturer :

NTE Electronics

Pin Count :

2 +Tab

Rad Hardened :

No

Qualification Status :

Not Qualified

Surface Mount :

No

Polarity/Channel Type :

PNP

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 4A, 3V

Number of Elements :

1

DC Current Gain-Min (hFE) :

100

Mounting :

Through Hole

Case Connection :

COLLECTOR

Collector-Emitter Voltage-Max :

80 V

Terminal Position :

BOTTOM

Series :

-

Product Status :

Active

JESD-30 Code :

O-MBFM-P2

JEDEC-95 Code :

TO-3

Package Shape :

Round

Operating Temperature :

-65°C ~ 200°C (TJ)

Emitter-Base Voltage :

5(V)

Current - Collector Cutoff (Max) :

500μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Current (DC) :

8(A)

Collector Current-Max (IC) :

8 A

Supplier Device Package :

TO-3

Transistor Application :

AMPLIFIER

Polarity :

PNP

Current - Collector (Ic) (Max) :

8 A

Power Dissipation :

100(W)

Frequency - Transition :

-

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

100 W

Configuration :

Single

Collector-Base Voltage :

80(V)

Mounting Type :

Through Hole

Base-Emitter Saturation Voltage (Max) :

4(V)

Operating Temperature Classification :

Military

Reach Compliance Code :

Unknown

Number of Terminals :

2

Package / Case :

TO-204AA, TO-3

Power Dissipation Ambient-Max :

150 W

Transistor Element Material :

SILICON

Transistor Type :

PNP - Darlington

Terminal Form :

PIN/PEG

Power - Max :

100 W

Package Type :

TO-3

Operating Temp Range :

-65C to 200C

DC Current Gain :

100@8A@3V/750@4A@3V

Vce Saturation (Max) @ Ib, Ic :

3V @ 80mA, 8A