NTE2427

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 10V

Weight :

4.535924 g

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

RoHS :

Compliant

Series :

-

Transistor Element Material :

SILICON

Package :

Bag

Terminal Position :

Single

Mounting Type :

Surface Mount

Power Dissipation-Max (Abs) :

1 W

Transistor Application :

SWITCHING

Operating Temperature :

150°C (TJ)

Transistor Type :

PNP - Darlington

Height :

6.35 mm

Collector Base Voltage (VCBO) :

90 V

Voltage - Collector Emitter Breakdown (Max) :

80 V

Collector Emitter Voltage (VCEO) :

80 V

Max Collector Current :

1.5 A

Qualification Status :

Not Qualified

Manufacturer :

NTE Electronics

Collector Current-Max (IC) :

0.5 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

101.6 mm

Surface Mount :

yes

Current - Collector Cutoff (Max) :

10μA

Package Shape :

RECTANGULAR

Supplier Device Package :

SOT-89

Length :

165.1 mm

Current - Collector (Ic) (Max) :

500 mA

Reach Compliance Code :

Unknown

Emitter Base Voltage (VEBO) :

5 V

JESD-30 Code :

R-PSSO-F3

Terminal Form :

Flat

HTS Code :

8541.29.00.95

Polarity/Channel Type :

PNP

Package / Case :

TO-243AA

Frequency - Transition :

-

Product Status :

Active

Subcategory :

Other Transistors

DC Current Gain-Min (hFE) :

2000

Number of Elements :

1

Case Connection :

COLLECTOR

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Number of Terminals :

3

Power - Max :

1 W