NTE2412

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Package :

Bag

Collector Base Voltage (VCBO) :

300 V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Vce Saturation (Max) @ Ib, Ic :

2V @ 5mA, 50mA

Terminal Position :

Dual

Max Collector Current :

100 mA

Terminal Form :

Gull wing

Height :

6.35 mm

Current - Collector Cutoff (Max) :

500nA (ICBO)

Mounting Type :

Surface Mount

Weight :

4.535924 g

Collector-Emitter Voltage-Max :

300 V

Manufacturer :

NTE Electronics

Reach Compliance Code :

Unknown

DC Current Gain-Min (hFE) :

56

Frequency - Transition :

100MHz

Package Shape :

RECTANGULAR

Min Operating Temperature :

-55 °C

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Power - Max :

200 mW

Surface Mount :

yes

Current - Collector (Ic) (Max) :

100 mA

Mount :

Surface Mount

Series :

-

Collector Current-Max (IC) :

0.1 A

Operating Temperature :

150°C (TJ)

Transistor Element Material :

SILICON

Max Operating Temperature :

150 °C

Power Dissipation-Max (Abs) :

0.31 W

Voltage - Collector Emitter Breakdown (Max) :

300 V

Width :

101.6 mm

Number of Terminals :

3

Configuration :

Single

Number of Elements :

1

Number of Pins :

3

RoHS :

Compliant

Transistor Type :

NPN

HTS Code :

8541.21.00.95

JESD-30 Code :

R-PDSO-G3

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 10mA, 10V

Collector Emitter Voltage (VCEO) :

300 V

Product Status :

Active

Transistor Application :

AMPLIFIER

Subcategory :

Other Transistors

Qualification Status :

Not Qualified

Emitter Base Voltage (VEBO) :

5 V

Supplier Device Package :

SOT-23

Length :

165.1 mm