NTE2411
- Mfr.Part #
- NTE2411
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 150V 0.5A SOT23
- Stock
- 9,486
- In Stock :
- 9,486
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 0.35 W
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Number of Terminals :
- 3
- Power - Max :
- 225 mW
- ECCN Code :
- EAR99
- Collector Current-Max (IC) :
- 0.5 A
- Collector-Emitter Voltage-Max :
- 150 V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Configuration :
- Single
- Frequency - Transition :
- 300MHz
- Series :
- -
- Surface Mount :
- yes
- HTS Code :
- 8541.21.00.95
- Terminal Form :
- Gull wing
- Product Status :
- Active
- Manufacturer :
- NTE Electronics
- DC Current Gain-Min (hFE) :
- 50
- Polarity/Channel Type :
- PNP
- Supplier Device Package :
- SOT-23
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 10mA, 5V
- Current - Collector Cutoff (Max) :
- 50nA (ICBO)
- Transistor Type :
- PNP
- Number of Elements :
- 1
- Package :
- Bag
- Subcategory :
- Other Transistors
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Voltage - Collector Emitter Breakdown (Max) :
- 150 V
- JESD-30 Code :
- R-PDSO-G3
- Package Shape :
- RECTANGULAR
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 500 mA
- Terminal Position :
- Dual
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Datasheets
- NTE2411

PNP -55°C ~ 150°C (TJ) 50nA (ICBO) 1 Elements SILICON PNP TO-236-3, SC-59, SOT-23-3 Surface Mount
NTE2411 Overview
In this device, the DC current gain is 60 @ 10mA, 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 5mA, 50mA.Product comes in the supplier's device package SOT-23.150 V is set as the maximum collector-emitter voltage.There is a 150 V maximal voltage in the device due to collector-emitter breakdown.
NTE2411 Features
the DC current gain for this device is 60 @ 10mA, 5V
the vce saturation(Max) is 1V @ 5mA, 50mA
the supplier device package of SOT-23
NTE2411 Applications
There are a lot of NTE Electronics, Inc
NTE2411 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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