NTE238

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Drain to Source Voltage (Vdss) :

800 V

Element Configuration :

Single

RoHS :

Compliant

Continuous Drain Current :

4(A)

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

78 nC @ 10 V

FET Feature :

-

Product Status :

Active

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Channel Mode :

Enhancement

Supplier Device Package :

TO-220

Current - Continuous Drain (Id) @ 25°C :

4.1A (Tc)

Drain to Source Resistance :

3 Ω

JEDEC-95 Code :

TO-220AB

Package Type :

TO-220

Operating Temp Range :

-55C to 150C

Rad Hardened :

No

Drain-source On Resistance-Max :

3 Ω

Number of Terminals :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

4 A

Transistor Element Material :

SILICON

Gate-Source Voltage (Max) :

±30(V)

Min Operating Temperature :

-55 °C

Power Dissipation Ambient-Max :

125 W

Number of Pins :

3

Threshold Voltage :

3 V

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature Classification :

Military

Weight :

7.257478 g

Number of Elements :

1

Max Operating Temperature :

150 °C

Width :

76.2 mm

Manufacturer :

NTE Electronics

Polarity :

N

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Package / Case :

TO-220-3

Power Dissipation :

125(W)

Technology :

MOSFET (Metal Oxide)

Mount :

Through Hole

Turn-Off Delay Time :

130 ns

Operating Temperature :

-55°C ~ 150°C (TJ)

Pin Count :

3 +Tab

Drive Voltage (Max Rds On, Min Rds On) :

10V

Max Power Dissipation :

125 W

Rise Time :

25 ns

DS Breakdown Voltage-Min :

800 V

Terminal Position :

Single

Drain-Source On-Volt :

800(V)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Nominal Vgs :

3 V

Surface Mount :

No

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

16 A

HTS Code :

8541.29.00.95

Reach Compliance Code :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

4 A

Series :

-

Drain to Source Breakdown Voltage :

800 V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

3Ohm @ 1.5A, 10V

Power Dissipation (Max) :

125W (Tc)

Power Dissipation-Max (Abs) :

125 W

Height :

15.494 mm

Mounting :

Through Hole

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package Shape :

RECTANGULAR

Package :

Bag

Length :

10.668 mm

Gate to Source Voltage (Vgs) :

30 V

Type :

Power MOSFET

Vgs (Max) :

±20V

ECCN Code :

EAR99

Turn-On Delay Time :

10 ns

Subcategory :

FET General Purpose Power