NTE2366

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Mfr.Part #
NTE2366
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 Long Body
Datasheet
Download
Description
TRANS PNP 300V 0.1A TO92L
Stock
40
In Stock :
40

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Series :
-
Collector Current-Max (IC) :
0.1 A
Current - Collector (Ic) (Max) :
100 mA
Surface Mount :
No
Terminal Form :
Wire
Qualification Status :
Not Qualified
Supplier Device Package :
TO-92L
Current - Collector Cutoff (Max) :
100nA (ICBO)
Terminal Position :
BOTTOM
Number of Terminals :
3
Power Dissipation-Max (Abs) :
1 W
Mounting Type :
Through Hole
Product Status :
Active
Operating Temperature :
-55°C ~ 150°C (TJ)
Frequency - Transition :
150MHz
Manufacturer :
NTE Electronics
Package / Case :
TO-226-3, TO-92-3 Long Body
Polarity/Channel Type :
PNP
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector-Emitter Voltage-Max :
300 V
Transistor Type :
PNP
ECCN Code :
EAR99
Transistor Application :
AMPLIFIER
Package :
Bag
DC Current Gain-Min (hFE) :
40
HTS Code :
8541.29.00.75
Transistor Element Material :
SILICON
Subcategory :
Other Transistors
Reach Compliance Code :
Unknown
Voltage - Collector Emitter Breakdown (Max) :
300 V
Configuration :
Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
40 @ 10mA, 10V
Package Shape :
Round
Power - Max :
1 W
Vce Saturation (Max) @ Ib, Ic :
600mV @ 2mA, 20mA
JESD-30 Code :
O-PBCY-W3
Datasheets
NTE2366
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2366 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C ~ 150°C (TJ), Package / Case:TO-226-3, TO-92-3 Long Body, NTE2366 pinout, NTE2366 datasheet PDF, NTE2366 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2366 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2366


PNP -55°C ~ 150°C (TJ) 100nA (ICBO) 1 Elements SILICON PNP TO-226-3, TO-92-3 Long Body Through Hole

NTE2366 Overview


In this device, the DC current gain is 40 @ 10mA, 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.Supplier device package TO-92L comes with the product.Voltage of maximal collector-emitter is set to 300 V.The device exhibits a collector-emitter breakdown at 300 V.

NTE2366 Features


the DC current gain for this device is 40 @ 10mA, 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
the supplier device package of TO-92L


NTE2366 Applications


There are a lot of NTE Electronics, Inc
NTE2366 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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