NTE2353

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain-Min (hFE) :

5

Collector-Emitter Voltage-Max :

800 V

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 1A, 5V

Power Dissipation Ambient-Max :

70 W

Power - Max :

70 W

Package Shape :

RECTANGULAR

Product Status :

Active

Collector Current-Max (IC) :

10 A

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

TO-3PML

Terminal Position :

Single

Case Connection :

Isolated

Manufacturer :

NTE Electronics

Surface Mount :

No

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Frequency - Transition :

-

JESD-30 Code :

R-PSFM-T3

Voltage - Collector Emitter Breakdown (Max) :

800 V

Current - Collector (Ic) (Max) :

10 A

Pin Count :

3

Package :

Bag

Series :

-

Package / Case :

TO-3P-3 Full Pack

Number of Terminals :

3

Reach Compliance Code :

Unknown

Operating Temperature :

150°C (TJ)

Transistor Type :

NPN

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Vce Saturation (Max) @ Ib, Ic :

5V @ 1.6A, 8A

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

70 W

Subcategory :

Other Transistors

HTS Code :

8541.29.00.95

Current - Collector Cutoff (Max) :

1mA

Polarity/Channel Type :

NPN