NTE2352

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Mfr.Part #
NTE2352
Manufacturer
NTE Electronics, Inc.
Package / Case
3-SIP
Datasheet
Download
Description
TRANS PNP DARL 80V 4A 3SIP
Stock
184
In Stock :
184

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
100 V
Transistor Application :
SWITCHING
Current - Collector (Ic) (Max) :
4 A
ECCN Code :
EAR99
Collector Current-Max (IC) :
4 A
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Series :
-
Surface Mount :
No
RoHS :
Compliant
Package Shape :
RECTANGULAR
JESD-30 Code :
R-PSIP-T3
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
80 V
Transistor Type :
PNP - Darlington
Mount :
Through Hole
Collector-Emitter Voltage-Max :
80 V
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
20µA (ICBO)
Power - Max :
1 W
Terminal Position :
Single
DC Current Gain-Min (hFE) :
1000
Polarity/Channel Type :
PNP
HTS Code :
8541.29.00.95
Max Collector Current :
4 A
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Frequency - Transition :
-
Product Status :
Active
Operating Temperature :
150°C (TJ)
Number of Pins :
3
Number of Terminals :
3
Manufacturer :
NTE Electronics
Supplier Device Package :
3-SIP
Subcategory :
Other Transistors
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package :
Bag
Power Dissipation-Max (Abs) :
1 W
Package / Case :
3-SIP
Voltage - Collector Emitter Breakdown (Max) :
80 V
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 6mA, 3A
Reach Compliance Code :
Unknown
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 1A, 2V
Qualification Status :
Not Qualified
Emitter Base Voltage (VEBO) :
5 V
Datasheets
NTE2352
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2352 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:150°C (TJ), Number of Pins:3, Package / Case:3-SIP, NTE2352 pinout, NTE2352 datasheet PDF, NTE2352 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2352 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2352


PNP - Darlington 150°C (TJ) 20μA (ICBO) 1 Elements SILICON PNP 3-SIP Through Hole

NTE2352 Overview


In this device, the DC current gain is 2000 @ 1A, 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 6mA, 3A.With the emitter base voltage set at 5 V, an efficient operation can be achieved.Product comes in the supplier's device package 3-SIP.80 V is set as the maximum collector-emitter voltage.There is a 80 V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 4 A volts at Single BJT transistors maximum.

NTE2352 Features


the DC current gain for this device is 2000 @ 1A, 2V
the vce saturation(Max) is 1.5V @ 6mA, 3A
the emitter base voltage is kept at 5 V
the supplier device package of 3-SIP


NTE2352 Applications


There are a lot of NTE Electronics, Inc
NTE2352 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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