NTE2351

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

80 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

1 W

DC Current Gain-Min (hFE) :

1000

Operating Temp Range :

-55C to 150C

Number of Terminals :

3

Pin Count :

3 +Tab

Reach Compliance Code :

Unknown

Package Type :

TO-126N

Package :

Bag

Terminal Position :

Single

HTS Code :

8541.29.00.95

Emitter-Base Voltage :

5(V)

Polarity/Channel Type :

NPN

Configuration :

Single

Package Shape :

RECTANGULAR

Terminal Form :

THROUGH-HOLE

Series :

-

Power - Max :

1 W

Operating Temperature Classification :

Military

Power Dissipation :

1(W)

Qualification Status :

Not Qualified

Maximum Collector Cut-off Current :

20

Collector-Emitter Voltage-Max :

80 V

Rad Hardened :

No

Operating Temperature :

150°C (TJ)

Current - Collector Cutoff (Max) :

20µA (ICBO)

Base-Emitter Saturation Voltage (Max) :

2(V)

ECCN Code :

EAR99

Product Status :

Active

Package / Case :

3-SIP

Polarity :

NPN

Surface Mount :

No

Manufacturer :

NTE Electronics

Subcategory :

Other Transistors

Mounting Type :

Through Hole

Collector Current-Max (IC) :

4 A

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 1A, 2V

Mounting :

Through Hole

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 6mA, 3A

Collector Current (DC) :

4(A)

Collector-Base Voltage :

100(V)

Supplier Device Package :

3-SIP

JESD-30 Code :

R-PSIP-T3

Frequency - Transition :

-

DC Current Gain :

1000

Transistor Element Material :

SILICON

Transistor Type :

NPN - Darlington

Number of Elements :

1

Current - Collector (Ic) (Max) :

4 A