NTE2345

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Package Shape :

RECTANGULAR

Voltage - Collector Emitter Breakdown (Max) :

120 V

DC Current Gain-Min (hFE) :

750

Collector Current (DC) :

6(A)

Manufacturer :

NTE Electronics Inc

Terminal Position :

Single

Collector-Emitter Voltage-Max :

120 V

Current - Collector (Ic) (Max) :

6 A

Collector Current-Max (IC) :

6 A

Number of Elements :

1

Maximum Collector Cut-off Current :

200

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 3A, 3V

Package :

Bag

Polarity/Channel Type :

NPN

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Package Type :

SOT-82

Collector-Base Voltage :

120(V)

Configuration :

Single

Power Dissipation :

60(W)

Emitter-Base Voltage :

5(V)

Mounting Type :

Through Hole

Package / Case :

SOT-82

Operating Temp Range :

-65C to 150C

Series :

-

Mounting :

Through Hole

Transistor Type :

NPN - Darlington

Rad Hardened :

No

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

Power Dissipation-Max (Abs) :

60 W

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Product Status :

Active

Surface Mount :

No

Supplier Device Package :

SOT-82

Power - Max :

60 W

Pin Count :

3 +Tab

DC Current Gain :

750

Polarity :

NPN

Operating Temperature :

150°C (TJ)

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

500μA

Case Connection :

COLLECTOR

Frequency - Transition :

-

Subcategory :

Other Transistors

Operating Temperature Classification :

Military

Number of Terminals :

3