NTE2341

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Mfr.Part #
NTE2341
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 80V 1A TO92
Stock
116
In Stock :
116

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Configuration :
Single
Collector Emitter Voltage (VCEO) :
80 V
Emitter Base Voltage (VEBO) :
5 V
Number of Pins :
3
Vce Saturation (Max) @ Ib, Ic :
1.8V @ 1mA, 1A
Supplier Device Package :
TO-92
Power Dissipation-Max (Abs) :
1 W
Collector Current-Max (IC) :
1 A
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Power - Max :
1 W
Mounting :
Through Hole
RoHS :
Compliant
Collector Base Voltage (VCBO) :
100 V
Emitter-Base Voltage :
5(V)
Transistor Type :
NPN - Darlington
Package Type :
TO-92
Series :
-
Subcategory :
Other Transistors
Operating Temperature :
150°C (TJ)
Package :
Bag
Surface Mount :
No
HTS Code :
8541.21.00.75
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation :
1(W)
Current - Collector (Ic) (Max) :
1 A
Polarity :
NPN
DC Current Gain :
1000
Terminal Form :
Wire
Mounting Type :
Through Hole
Collector Current (DC) :
1(A)
Max Collector Current :
1 A
Polarity/Channel Type :
NPN
ECCN Code :
EAR99
Maximum Collector Cut-off Current :
0.1
Qualification Status :
Not Qualified
Product Status :
Active
DC Current Gain-Min (hFE) :
2000
Transistor Element Material :
SILICON
Package Shape :
Round
Pin Count :
3
Collector-Base Voltage :
100(V)
Voltage - Collector Emitter Breakdown (Max) :
80 V
Collector-Emitter Voltage-Max :
80 V
Rad Hardened :
No
Number of Elements :
1
Manufacturer :
NTE Electronics
JESD-30 Code :
O-PBCY-W3
Operating Temperature Classification :
Military
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA, 10V
Frequency - Transition :
200MHz
Operating Temp Range :
-65C to 150C
Current - Collector Cutoff (Max) :
500nA
Mount :
Through Hole
Number of Terminals :
3
Reach Compliance Code :
Unknown
Base-Emitter Saturation Voltage (Max) :
2.2(V)
Terminal Position :
BOTTOM
JEDEC-95 Code :
TO-92
Datasheets
NTE2341
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2341 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Operating Temperature:150°C (TJ), Mounting Type:Through Hole, NTE2341 pinout, NTE2341 datasheet PDF, NTE2341 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2341 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2341


NPN - Darlington 150°C (TJ) 500nA 1 Elements SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole

NTE2341 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA, 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5 V can result in a high level of efficiency.There is no device package available from the supplier for this product.80 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 80 V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1 A volts.

NTE2341 Features


the DC current gain for this device is 2000 @ 500mA, 10V
the vce saturation(Max) is 1.8V @ 1mA, 1A
the emitter base voltage is kept at 5 V
the supplier device package of TO-92


NTE2341 Applications


There are a lot of NTE Electronics, Inc
NTE2341 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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