NTE2340

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Mfr.Part #
NTE2340
Manufacturer
NTE Electronics, Inc.
Package / Case
3-SIP
Datasheet
Download
Description
TRANS NPN DARL 60V 8A 3SIP
Stock
232
In Stock :
232

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Power Dissipation Ambient-Max :
45 W
Operating Temperature :
150°C (TJ)
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Power - Max :
1.3 W
Collector Current-Max (IC) :
8 A
Package Shape :
RECTANGULAR
Package / Case :
3-SIP
Number of Elements :
1
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSIP-T3
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 4A, 3V
ECCN Code :
EAR99
Series :
-
HTS Code :
8541.29.00.95
Terminal Form :
THROUGH-HOLE
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100µA (ICBO)
Power Dissipation-Max (Abs) :
45 W
Polarity/Channel Type :
NPN
Subcategory :
Other Transistors
Supplier Device Package :
3-SIP
Voltage - Collector Emitter Breakdown (Max) :
60 V
Collector-Emitter Voltage-Max :
50 V
Manufacturer :
NTE Electronics
Product Status :
Active
Frequency - Transition :
20MHz
Surface Mount :
No
Package :
Bag
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 8mA, 4A
Pin Count :
3
Transistor Type :
NPN - Darlington
Number of Terminals :
3
Configuration :
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Terminal Position :
Single
DC Current Gain-Min (hFE) :
500
Current - Collector (Ic) (Max) :
8 A
Datasheets
NTE2340
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2340 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C (TJ), Package / Case:3-SIP, Mounting Type:Through Hole, NTE2340 pinout, NTE2340 datasheet PDF, NTE2340 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2340 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2340


NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN 3-SIP Through Hole

NTE2340 Overview


In this device, the DC current gain is 2000 @ 4A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 8mA, 4A.Product comes in the supplier's device package 3-SIP.50 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.

NTE2340 Features


the DC current gain for this device is 2000 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of 3-SIP


NTE2340 Applications


There are a lot of NTE Electronics, Inc
NTE2340 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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