NTE2340
- Mfr.Part #
- NTE2340
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A 3SIP
- Stock
- 232
- In Stock :
- 232
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation Ambient-Max :
- 45 W
- Operating Temperature :
- 150°C (TJ)
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Power - Max :
- 1.3 W
- Collector Current-Max (IC) :
- 8 A
- Package Shape :
- RECTANGULAR
- Package / Case :
- 3-SIP
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSIP-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 4A, 3V
- ECCN Code :
- EAR99
- Series :
- -
- HTS Code :
- 8541.29.00.95
- Terminal Form :
- THROUGH-HOLE
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Power Dissipation-Max (Abs) :
- 45 W
- Polarity/Channel Type :
- NPN
- Subcategory :
- Other Transistors
- Supplier Device Package :
- 3-SIP
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Collector-Emitter Voltage-Max :
- 50 V
- Manufacturer :
- NTE Electronics
- Product Status :
- Active
- Frequency - Transition :
- 20MHz
- Surface Mount :
- No
- Package :
- Bag
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 8mA, 4A
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- Number of Terminals :
- 3
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Terminal Position :
- Single
- DC Current Gain-Min (hFE) :
- 500
- Current - Collector (Ic) (Max) :
- 8 A
- Datasheets
- NTE2340

NPN - Darlington 150°C (TJ) 100μA (ICBO) 1 Elements SILICON NPN 3-SIP Through Hole
NTE2340 Overview
In this device, the DC current gain is 2000 @ 4A, 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 8mA, 4A.Product comes in the supplier's device package 3-SIP.50 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.
NTE2340 Features
the DC current gain for this device is 2000 @ 4A, 3V
the vce saturation(Max) is 1.5V @ 8mA, 4A
the supplier device package of 3-SIP
NTE2340 Applications
There are a lot of NTE Electronics, Inc
NTE2340 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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