NTE2335

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

-

Current - Collector (Ic) (Max) :

5 A

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

80 W

Terminal Form :

THROUGH-HOLE

Collector Current-Max (IC) :

5 A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

1

Number of Terminals :

3

Package Shape :

RECTANGULAR

Power Dissipation-Max (Abs) :

80 W

Frequency - Transition :

-

Surface Mount :

No

Transistor Type :

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA, 5V

Polarity/Channel Type :

NPN

Supplier Device Package :

TO-3P

Case Connection :

COLLECTOR

Reach Compliance Code :

Unknown

Power Dissipation Ambient-Max :

80 W

Series :

-

Terminal Position :

Single

Product Status :

Active

Collector-Emitter Voltage-Max :

45 V

Package :

Bag

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C (TJ)

JESD-30 Code :

R-PSFM-T3

DC Current Gain-Min (hFE) :

2000

Manufacturer :

NTE Electronics

Voltage - Collector Emitter Breakdown (Max) :

60 V

Subcategory :

Other Transistors

Configuration :

DARLINGTON WITH BUILT-IN DIODE

Pin Count :

2

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 1mA, 1A