NTE2322

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Supplier Device Package :

14-DIP

Category :

Bipolar Power

Operating Temperature Classification :

Military

Terminal Form :

THROUGH-HOLE

Collector-Emitter Voltage-Max :

40 V

Transistor Type :

PNP

Package Shape :

RECTANGULAR

Vce Saturation (Max) @ Ib, Ic :

1.6V @ 30mA, 300mA

Operating Temperature :

-55°C ~ 125°C (TJ)

Voltage - Collector Emitter Breakdown (Max) :

40 V

Pin Count :

14

Operating Temp Range :

-55C to 125C

Manufacturer :

NTE Electronics

Transistor Polarity :

PNP

Transistor Application :

AMPLIFIER

Reach Compliance Code :

Unknown

Collector Current-Max (IC) :

0.6 A

Package Type :

DIP

JESD-30 Code :

R-PDIP-T14

Surface Mount :

No

Number of Terminals :

14

Emitter-Base Voltage :

5(V)

Rad Hardened :

No

Polarity/Channel Type :

PNP

HTS Code :

8541.29.00.75

Collector Current (DC) :

0.6(A)

Mounting :

Through Hole

Current - Collector Cutoff (Max) :

50nA (ICBO)

DC Current Gain-Min (hFE) :

30

Qualification Status :

Not Qualified

Power - Max :

650 mW

Collector-Base Voltage :

60(V)

Mounting Type :

Through Hole

Number of Elements :

4

Frequency - Transition :

200MHz

Output Power :

Not Required(W)

Configuration :

QUAD

Current - Collector (Ic) (Max) :

600 mA

Transistor Element Material :

SILICON

Terminal Position :

Dual

Power Dissipation :

1.9(W)

Frequency :

200(MHz)

ECCN Code :

EAR99

Series :

-

Product Status :

Active

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Package :

Bag

Package / Case :

14-DIP (0.300, 7.62mm)