NTE2314

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Mfr.Part #
NTE2314
Manufacturer
NTE Electronics, Inc.
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS PNP 50V 15A TO3P
Stock
39
In Stock :
39

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Manufacturer :
NTE Electronics, Inc.
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Single
Package Shape :
RECTANGULAR
Package / Case :
TO-3P-3, SC-65-3
Transistor Type :
PNP
Number of Terminals :
3
DC Current Gain-Min (hFE) :
30
Qualification Status :
Not Qualified
Collector Current-Max (IC) :
15 A
Package :
Bag
Number of Elements :
1
Product Status :
Active
ECCN Code :
EAR99
Case Connection :
COLLECTOR
Configuration :
Single
Mounting Type :
Through Hole
Subcategory :
Other Transistors
Voltage - Collector Emitter Breakdown (Max) :
50 V
Terminal Form :
THROUGH-HOLE
Power - Max :
90 W
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1A, 2V
Current - Collector (Ic) (Max) :
15 A
Transistor Element Material :
SILICON
Supplier Device Package :
TO-3P
Pin Count :
2
Collector-Emitter Voltage-Max :
50 V
Current - Collector Cutoff (Max) :
100µA (ICBO)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max (Abs) :
90 W
Polarity/Channel Type :
PNP
Frequency - Transition :
20MHz
Manufacturer :
NTE Electronics
Vce Saturation (Max) @ Ib, Ic :
500mV @ 400mA, 8A
Surface Mount :
No
Operating Temperature :
150°C (TJ)
Reach Compliance Code :
Unknown
Transistor Application :
SWITCHING
Power Dissipation Ambient-Max :
90 W
Series :
-
Datasheets
NTE2314
Introducing Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2314 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-3P-3, SC-65-3, Mounting Type:Through Hole, Operating Temperature:150°C (TJ), NTE2314 pinout, NTE2314 datasheet PDF, NTE2314 amp .Beyond Transistors - Bipolar (BJT) - Single NTE Electronics, Inc. NTE2314 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

NTE Electronics, Inc. NTE2314


PNP 150°C (TJ) 100μA (ICBO) 1 Elements SILICON PNP TO-3P-3, SC-65-3 Through Hole

NTE2314 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A, 2V.When VCE saturation is 500mV @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-3P contains the product.Voltage maximal between collector and emitter is set to 50 V.The device has a 50 V maximal voltage - Collector Emitter Breakdown.

NTE2314 Features


the DC current gain for this device is 100 @ 1A, 2V
the vce saturation(Max) is 500mV @ 400mA, 8A
the supplier device package of TO-3P


NTE2314 Applications


There are a lot of NTE Electronics, Inc
NTE2314 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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