NTE2314
- Mfr.Part #
- NTE2314
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 15A TO3P
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Single
- Package Shape :
- RECTANGULAR
- Package / Case :
- TO-3P-3, SC-65-3
- Transistor Type :
- PNP
- Number of Terminals :
- 3
- DC Current Gain-Min (hFE) :
- 30
- Qualification Status :
- Not Qualified
- Collector Current-Max (IC) :
- 15 A
- Package :
- Bag
- Number of Elements :
- 1
- Product Status :
- Active
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Mounting Type :
- Through Hole
- Subcategory :
- Other Transistors
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Terminal Form :
- THROUGH-HOLE
- Power - Max :
- 90 W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A, 2V
- Current - Collector (Ic) (Max) :
- 15 A
- Transistor Element Material :
- SILICON
- Supplier Device Package :
- TO-3P
- Pin Count :
- 2
- Collector-Emitter Voltage-Max :
- 50 V
- Current - Collector Cutoff (Max) :
- 100µA (ICBO)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max (Abs) :
- 90 W
- Polarity/Channel Type :
- PNP
- Frequency - Transition :
- 20MHz
- Manufacturer :
- NTE Electronics
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 400mA, 8A
- Surface Mount :
- No
- Operating Temperature :
- 150°C (TJ)
- Reach Compliance Code :
- Unknown
- Transistor Application :
- SWITCHING
- Power Dissipation Ambient-Max :
- 90 W
- Series :
- -
- Datasheets
- NTE2314

PNP 150°C (TJ) 100μA (ICBO) 1 Elements SILICON PNP TO-3P-3, SC-65-3 Through Hole
NTE2314 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A, 2V.When VCE saturation is 500mV @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-3P contains the product.Voltage maximal between collector and emitter is set to 50 V.The device has a 50 V maximal voltage - Collector Emitter Breakdown.
NTE2314 Features
the DC current gain for this device is 100 @ 1A, 2V
the vce saturation(Max) is 500mV @ 400mA, 8A
the supplier device package of TO-3P
NTE2314 Applications
There are a lot of NTE Electronics, Inc
NTE2314 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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