NTE2313

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Subcategory :

Other Transistors

Terminal Position :

Single

Number of Terminals :

3

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Pin Count :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 100mA, 5V

Terminal Form :

THROUGH-HOLE

Frequency - Transition :

4MHz

Reach Compliance Code :

Unknown

Power Dissipation Ambient-Max :

40 W

HTS Code :

8541.29.00.95

Power - Max :

50 W

DC Current Gain-Min (hFE) :

30

Package / Case :

TO-220-3

Configuration :

Single

JEDEC-95 Code :

TO-220AB

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

200μA

Transistor Type :

NPN

Number of Elements :

1

Operating Temperature :

-65°C ~ 150°C (TJ)

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Product Status :

Active

Collector Current-Max (IC) :

2 A

Series :

-

Collector-Emitter Voltage-Max :

450 V

Surface Mount :

No

Supplier Device Package :

TO-220

Package :

Bag

Manufacturer :

NTE Electronics

Vce Saturation (Max) @ Ib, Ic :

1V @ 200mA, 1A

Polarity/Channel Type :

NPN

Current - Collector (Ic) (Max) :

2 A

Voltage - Collector Emitter Breakdown (Max) :

450 V

Power Dissipation-Max (Abs) :

40 W

Package Shape :

RECTANGULAR

ECCN Code :

EAR99