NGD8201NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

125W

Fall Time-Max (tf) :

7000ns

Transistor Element Material :

SILICON

Pbfree Code :

No

Rise Time-Max :

14000ns

Base Part Number :

NGD8201N

Collector Emitter Breakdown Voltage :

440V

Input Type :

Logic

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Current Rating :

20A

Published :

2009

Td (on/off) @ 25°C :

-/5μs

Number of Pins :

3

Max Collector Current :

20A

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e0

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

30

Collector Emitter Voltage (VCEO) :

1.9V

Turn Off Time-Nom (toff) :

18500 ns

Case Connection :

COLLECTOR

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Form :

Gull wing

Voltage - Rated DC :

400V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Current - Collector Pulsed (Icm) :

50A

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

JESD-30 Code :

R-PSSO-G2

Test Condition :

300V, 9A, 1k Ω, 5V

Transistor Application :

AUTOMOTIVE IGNITION

Gate-Emitter Voltage-Max :

15V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Turn On Time :

6500 ns

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn80Pb20)

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

240

Qualification Status :

Not Qualified