NE85633-A

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Surface Mount :

yes

Packaging :

Strip

RoHS Status :

RoHS Compliant

Pin Count :

3

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

7000MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Transistor Element Material :

SILICON

Transistor Type :

NPN

Terminal Position :

Dual

Max Collector Current :

100mA

Gain :

11.5dB

Number of Elements :

1

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Max Power Dissipation :

200mW

Operating Temperature :

150°C TJ

Element Configuration :

Single

Qualification Status :

Not Qualified

Collector-Base Capacitance-Max :

1pF

Noise Figure (dB Typ @ f) :

1.1dB @ 1GHz

Power Dissipation :

200mW

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

12V

JESD-30 Code :

R-PDSO-G3

Continuous Collector Current :

100mA

HTS Code :

8541.21.00.75

Package / Case :

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 20mA 10V

Frequency - Transition :

7GHz

ECCN Code :

EAR99