NE68819-T1

Manufacturer :

CEL (California Eastern Laboratories)

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Base Part Number :

NE68819

Power Dissipation :

125mW

Emitter Base Voltage (VEBO) :

2V

Frequency - Transition :

5GHz

Transition Frequency :

9500MHz

Terminal Position :

Dual

Transistor Type :

NPN

Additional Feature :

LOW NOISE

Max Collector Current :

100mA

ECCN Code :

EAR99

HTS Code :

8541.21.00.75

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 3mA 1V

Polarity/Channel Type :

NPN

Package / Case :

SOT-523

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

125mW

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Continuous Collector Current :

100mA

Collector Emitter Breakdown Voltage :

6V

Reach Compliance Code :

Unknown

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Surface Mount

Frequency :

9.5GHz

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Number of Pins :

3

Collector-Base Capacitance-Max :

0.8pF

Terminal Form :

Gull wing

Element Configuration :

Single

Noise Figure (dB Typ @ f) :

1.7dB ~ 2.5dB @ 2GHz