NDS9952A
- Mfr.Part #
- NDS9952A
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 48,803
- In Stock :
- 48,803
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Rise Time :
- 21ns
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 1A, 10V
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Number of Terminations :
- 8
- Turn-Off Delay Time :
- 21 ns
- Continuous Drain Current (ID) :
- 3.7A
- Current - Continuous Drain (Id) @ 25°C :
- 3.7A 2.9A
- Current Rating :
- 2.9A
- FET Feature :
- Logic Level Gate
- FET Type :
- N and P-Channel
- Drain to Source Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2.8V @ 250μA
- Threshold Voltage :
- 1.7V
- Input Capacitance (Ciss) (Max) @ Vds :
- 320pF @ 10V
- Pulsed Drain Current-Max (IDM) :
- 15A
- Weight :
- 230.4mg
- Factory Lead Time :
- 18 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Pbfree Code :
- yes
- Nominal Vgs :
- 1.7 V
- Number of Pins :
- 8
- JESD-609 Code :
- e3
- Dual Supply Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation :
- 900mW
- Power Dissipation :
- 2W
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Element Configuration :
- Dual
- Fall Time (Typ) :
- 8 ns
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Resistance :
- 80mOhm
- Termination :
- SMD/SMT
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Datasheets
- NDS9952A

NDS9952A datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDS9952A Description
These dual N- and P-channel enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to ON Semiconductors. In the avalanche and commutation modes, this very high density technology is specifically designed to decrease on-state resistance, offer improved switching performance, and withstand high energy pulses. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS9952A Features
-
N-Channel 3.7 A, 30 V, RDS(ON) = 0.08 W @ VGS = 10 V.
-
P-Channel: 2.9A, -30V, 0.13W at -10V for RDS(ON).
-
High density cell architecture or a very low RDS (ON).
-
a surface mount package with high power and current handling capacity.
-
Surface-mount MOSFET with dual (N and P) channels.
NDS9952A Applications
Switching applications
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