MUN2231T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Published :

2013

Terminal Form :

Gull wing

Radiation Hardening :

No

Polarity :

NPN

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

Pin Count :

3

Element Configuration :

Single

Max Power Dissipation :

338mW

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Number of Elements :

1

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Min Operating Temperature :

-55°C

Peak Reflow Temperature (Cel) :

260

hFE Min :

8

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Halogen Free :

Halogen Free

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

2.2 k Ω

Surface Mount :

yes

Resistor - Base (R1) :

2.2 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Number of Terminations :

3

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Pins :

3

Mounting Type :

Surface Mount

Transistor Type :

NPN - Pre-Biased

Max Collector Current :

100mA

Current Rating :

100mA

Max Operating Temperature :

150°C

Power Dissipation :

230mW

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Continuous Collector Current :

100mA