MUN2231T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

2.2 k Ω

Terminal Position :

Dual

Published :

2013

Max Power Dissipation :

338mW

Radiation Hardening :

No

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Transistor Application :

SWITCHING

Pin Count :

3

Terminal Finish :

Tin (Sn)

Transistor Type :

NPN - Pre-Biased

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Surface Mount :

yes

ECCN Code :

EAR99

Current Rating :

100mA

Collector Emitter Breakdown Voltage :

50V

Polarity :

NPN

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Halogen Free :

Halogen Free

hFE Min :

8

Lead Free :

Lead Free

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Continuous Collector Current :

100mA

Number of Pins :

3

Power Dissipation :

230mW

Lifecycle Status :

ACTIVE (Last Updated: 2 weeks ago)

RoHS Status :

ROHS3 Compliant

Resistor - Emitter Base (R2) :

2.2 k Ω

Current - Collector Cutoff (Max) :

500nA

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

JESD-609 Code :

e3

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260