MUN2216T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Voltage - Rated DC :

50V

Element Configuration :

Single

Continuous Collector Current :

100mA

hFE Min :

160

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 5mA 10V

Pin Count :

3

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Number of Pins :

3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Factory Lead Time :

2 Weeks

Max Power Dissipation :

338mW

Current Rating :

100mA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Type :

NPN - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Halogen Free :

Halogen Free

Current - Collector Cutoff (Max) :

500nA

Surface Mount :

yes

JESD-609 Code :

e3

Max Collector Current :

100mA

Radiation Hardening :

No

Terminal Position :

Dual

Polarity :

NPN

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Additional Feature :

BUILT-IN BIAS RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

Published :

2007

Lead Free :

Lead Free

Max Operating Temperature :

150°C

Power Dissipation :

338mW

Pbfree Code :

yes

Package / Case :

TO-236-3, SC-59, SOT-23-3

ECCN Code :

EAR99

Resistor - Base (R1) :

4.7 k Ω