MUN2213T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Current Rating :

100mA

hFE Min :

80

Resistor - Emitter Base (R2) :

47 k Ω

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Resistor - Base (R1) :

47 k Ω

Height :

1.09mm

Max Power Dissipation :

338mW

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Operating Supply Voltage :

50V

Voltage - Rated DC :

50V

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Polarity :

NPN

JESD-609 Code :

e3

Max Output Current :

100mA

Collector Emitter Saturation Voltage :

250mV

Transistor Type :

NPN - Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

50V

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Power Dissipation :

230mW

Width :

1.5mm

Surface Mount :

yes

Max Collector Current :

100mA

Continuous Collector Current :

100mA

Current - Collector Cutoff (Max) :

500nA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Length :

2.9mm

Pin Count :

3

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Base Part Number :

MUN2213

Terminal Form :

Gull wing

Collector Emitter Breakdown Voltage :

50V

Terminal Position :

Dual

Published :

2003

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C