MUN2212T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

50V

Resistor - Emitter Base (R2) :

22 k Ω

Radiation Hardening :

No

Continuous Collector Current :

100mA

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Halogen Free :

Halogen Free

Min Operating Temperature :

-55°C

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 10V

Transistor Type :

NPN - Pre-Biased

Width :

1.5mm

Power Dissipation :

338mW

Published :

2007

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

250mV

JESD-609 Code :

e3

Pin Count :

3

Terminal Form :

Gull wing

Element Configuration :

Single

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

60

Number of Pins :

3

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Mounting Type :

Surface Mount

Current Rating :

100mA

Current - Collector Cutoff (Max) :

500nA

Transistor Application :

SWITCHING

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Height :

1.09mm

Number of Elements :

1

Resistor - Base (R1) :

22 k Ω

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

338mW

Length :

2.9mm

Polarity :

NPN

Number of Terminations :

3

Base Part Number :

MUN2212