MUN2136T1
- Mfr.Part #
- MUN2136T1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PREBIAS PNP 230MW SC59
- Stock
- 2,776
- In Stock :
- 2,776
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- hFE Min :
- 80
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- PNP
- Resistor - Emitter Base (R2) :
- 100 k Ω
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Height :
- 1.09mm
- Pbfree Code :
- yes
- Pin Count :
- 3
- Surface Mount :
- yes
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 300μA, 10mA
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 10V
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Length :
- 2.9mm
- Resistor - Base (R1) :
- 100 k Ω
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Min Operating Temperature :
- -55°C
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 50V
- Continuous Collector Current :
- 100mA
- Number of Pins :
- 3
- Width :
- 1.5mm
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2013
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 230mW
- Transistor Type :
- PNP - Pre-Biased
- Weight :
- 7.994566mg
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 500nA
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MUN2136T1
MUN2136T1 Documents

MUN2136T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at
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