MUN2133T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Pin Count :

3

Resistor - Base (R1) :

4.7 k Ω

Collector Emitter Voltage (VCEO) :

50V

hFE Min :

80

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

JESD-609 Code :

e3

Number of Terminations :

3

Transistor Type :

PNP - Pre-Biased

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

8 Weeks

Lead Free :

Lead Free

Terminal Position :

Dual

Max Collector Current :

100mA

Max Power Dissipation :

230mW

Element Configuration :

Single

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 10

Min Operating Temperature :

-55°C

Current - Collector Cutoff (Max) :

500nA

Max Operating Temperature :

150°C

Published :

2006

Number of Pins :

3

Terminal Form :

Gull wing

Pbfree Code :

yes

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Collector Emitter Breakdown Voltage :

50V

Power Dissipation :

230mW

Continuous Collector Current :

100mA

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

TO-236-3, SC-59, SOT-23-3

Number of Elements :

1

Transistor Application :

SWITCHING

Current Rating :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

Mounting Type :

Surface Mount

Polarity :

PNP

Resistor - Emitter Base (R2) :

47 k Ω