MTP2P50EG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

ECCN Code :

EAR99

Surface Mount :

No

Turn-Off Delay Time :

21 ns

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Power Dissipation :

75W

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 5 days ago)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Rise Time :

14ns

Packaging :

Tube

Lead Free :

Lead Free

Height :

9.28mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Additional Feature :

High Voltage

Mounting Type :

Through Hole

Number of Terminations :

3

Resistance :

6Ohm

Voltage - Rated DC :

-500V

Nominal Vgs :

3 V

Avalanche Energy Rating (Eas) :

80 mJ

Pin Count :

3

Published :

2000

Width :

4.82mm

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

19 ns

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

6A

REACH SVHC :

No SVHC

FET Type :

P-Channel

Current Rating :

-2A

Element Configuration :

Single

Continuous Drain Current (ID) :

2A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

-3V

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

6 Ω @ 1A, 10V

Drain Current-Max (Abs) (ID) :

2A

Length :

10.28mm

Number of Pins :

3

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

1183pF @ 25V

Weight :

4.535924g

Current - Continuous Drain (Id) @ 25°C :

2A Tc

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

75W Tc

JEDEC-95 Code :

TO-220AB