MTP23P06V
- Mfr.Part #
- MTP23P06V
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 23A TO220AB
- Stock
- 55,364
- In Stock :
- 55,364
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Rise Time :
- 98.3ns
- Drain to Source Breakdown Voltage :
- -60V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 90W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Packaging :
- Tube
- Number of Terminations :
- 3
- Vgs (Max) :
- ±15V
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- -60V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 11.5A, 10V
- Qualification Status :
- Not Qualified
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 90W
- Pbfree Code :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 25V
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 23A
- Published :
- 2001
- Number of Pins :
- 3
- Current Rating :
- -23A
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Gate to Source Voltage (Vgs) :
- 15V
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Fall Time (Typ) :
- 62 ns
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Turn-Off Delay Time :
- 41 ns
- Avalanche Energy Rating (Eas) :
- 794 mJ
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- JESD-609 Code :
- e0
- Lead Free :
- Contains Lead
- Mount :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Peak Reflow Temperature (Cel) :
- 235
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- MTP23P06V

P-Channel Tube 120m Ω @ 11.5A, 10V ±15V 1620pF @ 25V 50nC @ 10V 60V TO-220-3
MTP23P06V Description
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTP23P06V Features
-
Avalanche Energy Specified
-
IDSS and VDS(on) Specified at Elevated Temperature
-
Pb?Free Package is Available*
MTP23P06V Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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