MTP23P06V
- Mfr.Part #
- MTP23P06V
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 23A TO220AB
- Stock
- 55,364
- In Stock :
- 55,364
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- -60V
- Mounting Type :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Additional Feature :
- AVALANCHE RATED
- Published :
- 2001
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- P-Channel
- Rise Time :
- 98.3ns
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1620pF @ 25V
- Peak Reflow Temperature (Cel) :
- 235
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Fall Time (Typ) :
- 62 ns
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 90W
- Reach Compliance Code :
- not_compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 weeks ago)
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 11.5A, 10V
- Vgs (Max) :
- ±15V
- Avalanche Energy Rating (Eas) :
- 794 mJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- -60V
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 23A
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 10V
- Pin Count :
- 3
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 90W Tc
- JESD-609 Code :
- e0
- Turn-Off Delay Time :
- 41 ns
- Packaging :
- Tube
- Current Rating :
- -23A
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- No
- Drain to Source Voltage (Vdss) :
- 60V
- Gate to Source Voltage (Vgs) :
- 15V
- Lead Free :
- Contains Lead
- Datasheets
- MTP23P06V

P-Channel Tube 120m Ω @ 11.5A, 10V ±15V 1620pF @ 25V 50nC @ 10V 60V TO-220-3
MTP23P06V Description
High energy can be withstood by this Power MOSFET in the avalanche and commutation modes. These devices are especially well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. They are designed for low voltage, high speed switching applications in power supplies, converters, and power motor controls.
MTP23P06V Features
-
Avalanche Energy Specified
-
IDSS and VDS(on) Specified at Elevated Temperature
-
Pb?Free Package is Available*
MTP23P06V Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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